Dmitri Loubychev

Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their Scalabilities

D. K. Mohata, S. Mookerjea, Ashish Agrawal et al. · Applied Physics Express · 2011 · 104 citations

Engineering, Electrical Engineering, Materials Engineering +15

Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications

D. K. Mohata, R. Bijesh, Salil Mujumdar et al. · 2011 · 103 citations

Engineering, Electrical Engineering, Materials Science +17

Ultrahigh-Speed 0.5 V Supply Voltage $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ Quantum-Well Transistors on Silicon Substrate

Suman Datta, G. Dewey, J. M. Fastenau et al. · IEEE Electron Device Letters · 2007 · 89 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio

D. K. Mohata, R. Bijesh, Yunhai Zhu et al. · 2012 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth

Johann C. Rode, Han‐Wei Chiang, Prateek Choudhary et al. · IEEE Transactions on Electron Devices · 2015 · 53 citations

Engineering, Electrical Engineering, Materials Science +17