Toshiya Tabuchi

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

Dennis Christy, Takashi Egawa, Yoshiki Yano et al. · Applied Physics Express · 2013 · 100 citations

Wide-bandgap Semiconductor, Mm Silicon, Electrical Engineering +11

Normally-OFF Al₂O₃/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)

Joseph J. Freedsman, Takashi Egawa, Yuya Yamaoka et al. · Applied Physics Express · 2014 · 81 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

Guanxi Piao, Kazutada Ikenaga, Yoshiki Yano et al. · Journal of Crystal Growth · 2016 · 62 citations

Wide-bandgap Semiconductor, Applied Physics, Gan Power Device +3

Flow patterns in various vertical reactors and movpe growth

Koh Matsumoto, Kiminori Itoh, Toshiya Tabuchi et al. · Journal of Crystal Growth · 1986 · 27 citations

Engineering, Fluid Mechanics, Movpe Growth +4

High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system

Akinori Ubukata, Yoshiki Yano, Hayato Shimamura et al. · Journal of Crystal Growth · 2012 · 23 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7