Stefan Duenkel

Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs

Shan Deng, Zijian Zhao, You Sung Kim et al. · IEEE Transactions on Electron Devices · 2022 · 53 citations

Non-volatile Memory, Engineering, Charge Transport +21

Tunable Non-Volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse

Tae‐Hyeon Kim, Omkar Phadke, Yuan-Chun Luo et al. · IEEE Electron Device Letters · 2023 · 47 citations

Multiple Stress Memorization In Advanced SOI CMOS Technologies

A. Wei, Maciej Wiatr, A. Mowry et al. · 2007 · 38 citations

Engineering, Vlsi Design, Computer Architecture +16

Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window

Zhouhang Jiang, Yi Xiao, Swetaki Chatterjee et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 25 citations

Device Modeling, Non-volatile Memory, Electrical Engineering +12

Uniting The Trinity of Ferroelectric HfO₂ Memory Devices in a Single Memory Cell

Stefan Slesazeck, Viktor Havel, Evelyn T. Breyer et al. · 2019 · 22 citations · Full text

Polarization Reversal, Engineering, Emerging Memory Technology +18