E. I. Shabunina

Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs

In‐Hwan Lee, A. Y. Polyakov, Sung-Min Hwang et al. · Applied Physics Letters · 2017 · 25 citations

Wide-bandgap Semiconductor, Engineering, Local Leakage Channels +19

Two channels of non-radiative recombination in InGaN/GaN LEDs

N. S. Averkiev, A. E. Chernyakov, M. E. Levinshteĭn et al. · Physica B Condensed Matter · 2009 · 21 citations

Photonics, Solid-state Lighting, Engineering +6

Extended defect system as a main source of non‐radiative recombination in InGaN/GaN LEDs

E. I. Shabunina, N. S. Averkiev, A. E. Chernyakov et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2012 · 16 citations

Wide-bandgap Semiconductor, Main Source, Electrical Engineering +14

Deep trap analysis in green light emitting diodes: Problems and solutions

A. Y. Polyakov, N. M. Shmidt, N. B. Smirnov et al. · Journal of Applied Physics · 2019 · 16 citations

Wide-bandgap Semiconductor, Deep Electron, Deep Trap Analysis +18

1/f noise in forward biased high voltage 4H-SiC Schottky diodes

E. I. Shabunina, M. E. Levinshteĭn, N. M. Shmidt et al. · Solid-State Electronics · 2014 · 15 citations

Electrical Engineering, Engineering, Electronic Engineering +3