Concepedia

G. Tsiakatouras

GT

Statistics

Publications

8

Citations

153

H-Index

8

Active since

2008

Affiliations

University of Crete(Current)

FORTH Institute of Electronic Structure and Laser

Foundation for Research and Technology Hellas

Aristotle University of Thessaloniki

G. Tsiakatouras is an author at University of Crete specializing in applied physics, materials science, and engineering.

Top concepts

EngineeringApplied PhysicsMaterial SciencePhysicsCrystalline DefectsOptoelectronicsElectrical EngineeringNanotechnologySemiconductorsSurface Science

Publications per year

2008–2014

8

Publications

8

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

J. Kuzmı́k, S. Bychikhin, D. Pogány et al. · Journal of Applied Physics · 2011 · 39 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12

The defect character of GaN growth on r-plane sapphire

Julita Smalc‐Koziorowska, G. Tsiakatouras, A. Lotsari et al. · Journal of Applied Physics · 2010 · 27 citations

Materials Science, Semiconductors, Epitaxial Growth +15

Epitaxial growth, electrical and optical properties of a-plane InN on r-plane sapphire

A. O. Ajagunna, E. Iliopoulos, G. Tsiakatouras et al. · Journal of Applied Physics · 2010 · 19 citations

Optical Materials, Engineering, R-plane Sapphire +19

Structural anisotropic properties of <i>a</i>-plane GaN epilayers grown on <i>r</i>-plane sapphire by molecular beam epitaxy

A. Lotsari, Th. Kehagias, G. Tsiakatouras et al. · Journal of Applied Physics · 2014 · 16 citations

Materials Science, Materials Engineering, Epitaxial Growth +15

Step-induced misorientation of GaN grown on r-plane sapphire

Julita Smalc‐Koziorowska, G. P. Dimitrakopulos, S.‐L. Sahonta et al. · Applied Physics Letters · 2008 · 14 citations

Materials Engineering, Materials Science, Epitaxial Growth +15

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