M. Norishima

A 0.9-V, 150-MHz, 10-mW, 4 mm/sup 2/, 2-D discrete cosine transform core processor with variable threshold-voltage (VT) scheme

Tadahiro Kuroda, Takeshi Fujita, S. Mita et al. · IEEE Journal of Solid-State Circuits · 1996 · 473 citations

Engineering, Computer Engineering, Electrical Engineering +17

A study of nonequilibrium diffusion modeling-applications to rapid thermal annealing and advanced bipolar technologies

B. Baccus, T. Wada, N. Shigyo et al. · IEEE Transactions on Electron Devices · 1992 · 41 citations

Engineering, Materials Engineering, Materials Science +17

Impurity diffusion behavior of bipolar transistor under low-temperature furnace annealing and high-temperature RTA and its optimization for 0.5- mu m Bi-CMOS process

M. Norishima, Hiroshi Iwai, Y. Niitsu et al. · IEEE Transactions on Electron Devices · 1992 · 18 citations

Engineering, Electrical Engineering, Materials Science +17

0.8µm Bi-CMOS technology with high f<inf>T</inf>ion-implanted emitter bipolar transistor

Hiroshi Iwai, Gen Sasaki, Y. Unno et al. · 1987 · 17 citations

Engineering, Computer Engineering, Electrical Engineering +17