Mesut Meterelliyoz

MRAM as Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology

O. Golonzka, Juan G. Alzate, Ümüt Arslan et al. · 2018 · 156 citations

Engineering, Computer Engineering, Electrical Engineering +14

13.3 A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique

Liqiong Wei, Juan G. Alzate, Ümüt Arslan et al. · 2019 · 133 citations

Engineering, Computer Engineering, Electrical Engineering +15

13.2 A 3.6Mb 10.1Mb/mm² Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V with Sensing Time of 5ns at 0.7V

Pulkit Jain, Ümüt Arslan, Meenakshi Sekhar et al. · 2019 · 130 citations

Engineering, Computer Engineering, Electrical Engineering +11

A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry

Eric Karl, Yih Wang, Yong-Gee Ng et al. · IEEE Journal of Solid-State Circuits · 2012 · 72 citations

Engineering, Computer Engineering, Electrical Engineering +15

Rethinking Refresh: Increasing Availability and Reducing Power in DRAM for Cache Applications

Philip Emma, W. Reohr, Mesut Meterelliyoz · IEEE Micro · 2008 · 68 citations

Engineering, Computer Engineering, Computer Science +17