Yong-Gee Ng

A 4.6GHz 162Mb SRAM design in 22nm tri-gate CMOS technology with integrated active V<inf>MIN</inf>-enhancing assist circuitry

Eric Karl, Yih Wang, Yong-Gee Ng et al. · 2012 · 104 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology

Fatih Hamzaoglu, Yih Wang, Hong Jo Ahn et al. · IEEE Journal of Solid-State Circuits · 2009 · 83 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 32 nm High-k Metal Gate SRAM With Adaptive Dynamic Stability Enhancement for Low-Voltage Operation

Pramod Kolar, Eric Karl, Uddalak Bhattacharya et al. · IEEE Journal of Solid-State Circuits · 2010 · 76 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry

Eric Karl, Yih Wang, Yong-Gee Ng et al. · IEEE Journal of Solid-State Circuits · 2012 · 72 citations

Engineering, Computer Engineering, Electrical Engineering +15

A 1.1 GHz 12 $\mu$A/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications

Yih Wang, Hong Jo Ahn, Uddalak Bhattacharya et al. · IEEE Journal of Solid-State Circuits · 2008 · 71 citations

Engineering, Computer Engineering, Electrical Engineering +17