Neha Sharan

Ge Devices: A Potential Candidate for Sub-5-nm Nodes?

Neha Sharan, Geert Eneman, Nadine Collaert et al. · IEEE Transactions on Electron Devices · 2019 · 13 citations

Engineering, Electrical Engineering, Microelectronics +16

Nonquasi-Static Charge Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry

Neha Sharan, Santanu Mahapatra · IEEE Transactions on Electron Devices · 2013 · 11 citations

Engineering, Electrical Engineering, Circuit Theory +16

A Short-Channel Common Double-Gate MOSFET Model Adapted to Gate Oxide Thickness Asymmetry

Neha Sharan, Santanu Mahapatra · IEEE Transactions on Electron Devices · 2014 · 11 citations

Engineering, Electrical Engineering, Microelectronics +16

Experimental Validation of Process-Induced Variability Aware SPICE Simulation Platform for Sub-20 nm FinFET Technologies

Amita Rawat, Neha Sharan, Doyoung Jang et al. · IEEE Transactions on Electron Devices · 2021 · 11 citations

Engineering, Computer Engineering, Electrical Engineering +17

Cost Effective FinFET Platform for Stand Alone DRAM 1Y and Beyond Memory Periphery

A. Spessot, Neha Sharan, Hyungrock Oh et al. · 2018 · 10 citations

Engineering, Computer Engineering, Electrical Engineering +17