B. N. Guo

Ultra low p-type SiGe contact resistance FinFETs with Ti silicide liner using cryogenic contact implantation amorphization and Solid-Phase Epitaxial Regrowth (SPER)

Yu‐Chi Yang, N. Breil, C. Y. Yang et al. · 2016 · 26 citations

Engineering, Silicon On Insulator, Semiconductor Device +18

Advanced<scp>CMOS</scp>devices: Challenges and implant solutions

B. Colombeau, B. N. Guo, Hans‐Joachim L. Gossmann et al. · physica status solidi (a) · 2013 · 25 citations

TEAMS depth profiles in semiconductors

S. A. Datar, S. N. Renfrow, B. N. Guo et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1997 · 14 citations

Project Management, Management, Business +3

Benefits of cryo-implantation for 28 nm NMOS advanced junction formation

C. L. Yang, C. I. Li, G. P. Lin et al. · Semiconductor Science and Technology · 2012 · 14 citations

Engineering, Vlsi Design, Computer Architecture +16

Fin Bending Mitigation and Local Layout Effect Alleviation in Advanced FinFET Technology through Material Engineering and Metrology Optimization

Tao Wen, B. Colombeau, C.l. Li et al. · 2019 · 13 citations