Shigeo Ohshima

A 56-nm CMOS 99-${\hbox {mm}}^{2} $ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput

Ken Takeuchi, Yasushi Kameda, Susumu Fujimura et al. · IEEE Journal of Solid-State Circuits · 2007 · 70 citations

Engineering, Computer Engineering, Electrical Engineering +14

A 500-megabyte/s data-rate 4.5 M DRAM

N. Kushiyama, Shigeo Ohshima, D. Stark et al. · IEEE Journal of Solid-State Circuits · 1993 · 42 citations

Engineering, Computer Engineering, Electrical Engineering +13

A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput

Ken Takeuchi, Y. Kameda, Shinji Fujimura et al. · 2006 · 37 citations

Engineering, Computer Engineering, Electrical Engineering +16

500 Mbyte/sec data-rate 512 Kbits*9 DRAM using a novel I/O interface

N. Kushiyama, Shigeo Ohshima, D. Stark et al. · 2003 · 24 citations

Engineering, Computer Engineering, Computer Science +15

A 120mm² 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology

K. Kanda, Masaru Koyanagi, Toshio Yamamura et al. · 2008 · 24 citations

Engineering, Computer Engineering, Electrical Engineering +14