<i>N</i>-electron ground state energies of a quantum dot in magnetic field

R. C. Ashoori, H. L. Stormer, J. S. Weiner, +3

Physical Review Letters

Categoryquantum ElectronicsEngineeringMany-body Quantum PhysicSpin SystemsElectronic Properties +15

Single-electron capacitance spectroscopy of discrete quantum levels

R. C. Ashoori, H. L. Störmer, J. S. Weiner, +4

Physical Review Letters

SemiconductorsQuantum ScienceElectrical EngineeringSingle-electron Capacitance SpectroscopyMicroscopic Capacitor +11

One-dimensional plasmon dispersion and dispersionless intersubband excitations in GaAs quantum wires

A. R. Goñi, A. Pinczuk, J. S. Weiner, +4

Physical Review Letters

Gaas Quantum WiresEngineeringElectron PhysicSemiconductorsQuantum Materials +15

Inelastic light scattering by spin-density, charge-density, and single-particle excitations in GaAs quantum wires

A. Schmeller, A. R. Goñi, A. Pinczuk, +5

Physical review. B, Condensed matter

Gaas Quantum WiresExcitonic BindingCategoryquantum ElectronicsCharge ExcitationsEngineering +18

Single-electron capacitance spectroscopy of a few electron box

R. C. Ashoori, H. L. Störmer, J. S. Weiner, +4

Physica B Condensed Matter

Single-electron Capacitance SpectroscopyPhysicsElectron SpectroscopyNatural SciencesSpectroscopy +2

Ballistic electron optics

J. Spector, J. S. Weiner, H. L. Störmer, +3

Surface Science

EngineeringPhysicsOptical PropertiesApplied PhysicsElectron Diffraction +3

Optical and electrical properties of InP/InGaAs grown selectively on SiO2-masked InP

Yuh‐Lin Wang, A. Feygenson, R. A. Hamm, +4

Applied Physics Letters

Optical MaterialsEngineeringOptoelectronic DevicesElectrical PropertiesSemiconductors +18

A focused ion beam vacuum lithography process compatible with gas source molecular beam epitaxy

L. R. Harriott, H. Temkin, R. A. Hamm, +2

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

EngineeringElectron-beam LithographyIntegrated CircuitsVacuum DeviceBeam Lithography +17

Energy levels of an artificial atom probed with single-electron capacitance spectroscopy

R. C. Ashoori, H. L. Störmer, J. S. Weiner, +3

Surface Science

Single-electron Capacitance SpectroscopyEngineeringPhysicsAtomic Emission SpectroscopyNatural Sciences +9

Feature size effects on selective area epitaxy of InGaAs

M. A. Cotta, L. R. Harriott, Yuh‐Lin Wang, +5

Applied Physics Letters

EngineeringCrystal Growth TechnologyFeature Size EffectsElectromagnetic CompatibilityGrowth Rate +15