Y.-Y. Chen

Intrinsic switching variability in HfO<inf>2</inf> RRAM

A. Fantini, L. Goux, R. Degraeve et al. · 2013 · 134 citations

Engineering, Electrical Engineering, Materials Science +17

On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

L. Goux, Y.-Y. Chen, L. Pantisano et al. · Electrochemical and Solid-State Letters · 2010 · 119 citations

Natural Sciences, Materials Science, Physics +17

Individually addressed entangling gates in a two-dimensional ion crystal

YunLei Hou, Yanjie Yi, Yukai Wu et al. · Nature Communications · 2024 · 14 citations · Full text

Computing, Computer Engineering, Physics +14

Performance and reliability of Ultra-Thin HfO<inf>2</inf>-based RRAM (UTO-RRAM)

B. Govoreanu, Arjun Ajaykumar, H. Lipowicz et al. · 2013 · 12 citations

Engineering, Electrical Engineering, Materials Science +15