R. Beccard

Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers

L. Eckey, U. von Gfug, J. Holst et al. · Journal of Applied Physics · 1998 · 98 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15

Deposition of high quality GaAs films at fast rates in the LP-CVD system

K. Grüter, M. Deschler, H. Jürgensen et al. · Journal of Crystal Growth · 1989 · 57 citations

Fast Rates, Electrical Engineering, Lp-cvd System +8

Compensation effects in Mg-doped GaN epilayers

L. Eckey, U. von Gfug, J. Holst et al. · Journal of Crystal Growth · 1998 · 39 citations

Electrical Engineering, Engineering, Optical Properties +6

Comparison of hydrogen and nitrogen as carrier gas for MOVPE growth of GaN

Oliver Schön, B. Schineller, M. Heuken et al. · Journal of Crystal Growth · 1998 · 34 citations

Carrier Gas, Wide-bandgap Semiconductor, Electrical Engineering +6

Thick Hydride Vapour Phase Epitaxial GaN Layers Grown on Sapphire with Different Buffers

T. Paskova, Jens Birch, Sukkaneste Tungasmita et al. · physica status solidi (a) · 1999 · 23 citations

Materials Engineering, Materials Science, Crystalline Quality +13