Nicolas Wichmann

Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs

B. G. Vasallo, Nicolas Wichmann, Sylvain Bollaert et al. · IEEE Transactions on Electron Devices · 2007 · 68 citations

InAlAs–InGaAs Double-Gate HEMTs on Transferred Substrate

Nicolas Wichmann, I. Duszynski, X. Wallart et al. · IEEE Electron Device Letters · 2004 · 48 citations

Semiconductor Technology, Electrical Engineering, Engineering +11

Fabrication and characterization of 100-nm In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As double-gate HEMTs with two separate gate controls

Nicolas Wichmann, I. Duszynski, X. Wallart et al. · IEEE Electron Device Letters · 2005 · 26 citations

Semiconductor Technology, Electrical Engineering, Engineering +12

Comparison Between the Noise Performance of Double- and Single-Gate InP-Based HEMTs

B. G. Vasallo, Nicolas Wichmann, Sylvain Bollaert et al. · IEEE Transactions on Electron Devices · 2008 · 25 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Sb-HEMT: Toward 100-mV Cryogenic Electronics

Albert Noudeviwa, Yannick Roelens, F. Danneville et al. · IEEE Transactions on Electron Devices · 2010 · 21 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +13