Concepedia

Author

Nicolas Wichmann

Institut d'électronique de microélectronique et de nanotechnologieORCID

Also Known As

N. Wichmann, Nicolas Wichmann, Nicolas Wichmann (499131), Wichmann, N., Wichmann, Nicolas

79

Publications

340

Citations

9

H-Index

17

Concepts

All Affiliations

Institut d'électronique de microélectronique et de nanotechnologieUniversité de LilleCentre National de la Recherche ScientifiqueUniversidad de Salamanca
NW

About

Nicolas Wichmann is an author at Institut d'électronique de microélectronique et de nanotechnologie specializing in electronic engineering, engineering, and microelectronics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

6

6

145

2

Electrical Engineering

6

6

145

3

Applied Physics

5

5

133

4

Physics

1

1

25

5

Antenna

1

1

13

Nicolas Wichmann

×

9

Publications

235

Citations

9

H-Index

YearCitations

Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs

B. G. Vasallo, Nicolas Wichmann, Sylvain Bollaert,

IEEE Transactions on Electron Devices

2007

68

InAlAs–InGaAs Double-Gate HEMTs on Transferred Substrate

Nicolas Wichmann, I. Duszynski, X. Wallart,

IEEE Electron Device Letters

2004

48

Fabrication and characterization of 100-nm In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As double-gate HEMTs with two separate gate controls

Nicolas Wichmann, I. Duszynski, X. Wallart,

IEEE Electron Device Letters

2005

26

Comparison Between the Noise Performance of Double- and Single-Gate InP-Based HEMTs

B. G. Vasallo, Nicolas Wichmann, Sylvain Bollaert,

IEEE Transactions on Electron Devices

2008

25

Sb-HEMT: Toward 100-mV Cryogenic Electronics

Albert Noudeviwa, Yannick Roelens, F. Danneville,

IEEE Transactions on Electron Devices

2010

21

Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

Jie Shi, Nicolas Wichmann, Yannick Roelens,

Applied Physics Letters

2011

13

Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

M. F. Mohd Razip Wee, Arash Dehzangi, S. Bollaert,

PLoS ONE

2013

12

Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications

Ming Shi, Jérôme Saint-Martin, Arnaud Bournel,

Solid-State Electronics

2013

12

Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

Gaudencio Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín,

Journal of Applied Physics

2022

10

Page 1