M. Boriçi

Si/SiGe heterostructure parameters for device simulations

Lianfeng Yang, J.R. Watling, R.C.W. Wilkins et al. · Semiconductor Science and Technology · 2004 · 155 citations

Device Modeling, Materials Engineering, Electrical Engineering +13

The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs

J.R. Watling, Liqiu Yang, M. Boriçi et al. · Solid-State Electronics · 2004 · 32 citations

Electrical Engineering, Engineering, Physics +9

Monte Carlo simulations of III–V MOSFETs

K. Kálna, M. Boriçi, L. X. Yang et al. · Semiconductor Science and Technology · 2004 · 18 citations

Device Modeling, Gaas Channel, Electrical Engineering +12

Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs

Lung‐Jieh Yang, A. Asenov, J.R. Watling et al. · Microelectronics Reliability · 2004 · 17 citations

Electrical Engineering, Engineering, Rf Semiconductor +9

A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs

M. Boriçi, J.R. Watling, R.C.W. Wilkins et al. · Journal of Computational Electronics · 2003 · 15 citations

Device Modeling, Electrical Engineering, Engineering +13