Anastasia V. Ulanova

Author

National Research Nuclear University MEPhI ORCID

Also Known As

A V Ulanova, A. Ulanova, A. V. Ulanova, A.B. Boruzdina, A.V. Ulanova, Anastasia Ulanova, Anastasia V. Ulanova

Publications

315

Citations

H-Index

Concepts

All Affiliations

National Research Nuclear University MEPhI Russian Academy of Sciences

About

Anastasia V. Ulanova is an author at National Research Nuclear University MEPhI specializing in engineering, electrical engineering, and computer engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	163
2	Computer Engineering	6	6	153
3	Applied Physics	4	4	104
4	Education	1	1	20
5	Health Sciences	1	1	10

Anastasia V. Ulanova

Publications

218

Citations

H-Index

Page 1

	Year	Citations
Design of 65 nm CMOS SRAM for Space Applications: A Comparative Study Maxim S. Gorbunov, Pavel S. Dolotov, Andrey A. Antonov, IEEE Transactions on Nuclear Science Low-power ElectronicsHardware SecurityElectrical EngineeringAffected BitsEngineering	2014	53
Temperature Dependence of MCU Sensitivity in 65 nm CMOS SRAM Anna B. Boruzdina, Armen V. Sogoyan, Anatoly A. Smolin, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringVlsi DesignPhysicsHardware Reliability	2015	30
Flash memory cells data loss caused by total ionizing dose and heavy ions Andrey G. Petrov, Alexey Vasil’ev, Anastasia V. Ulanova, Open Physics Non-volatile MemoryElectrical EngineeringTotal Ionizing DoseStorage SystemsCharge Loss	2014	26
Automatic control system for memory chips performance in a radiation experiment Anna B. Boruzdina, Anastasia V. Ulanova, N. G. Grigor’ev,	2015	24
Automated I&#x2013;V measurement system for CMOS SOI transistor test structures Ivan I. Shvetsov-Shilovskiy, Pavel V. Nekrasov, Anastasia V. Ulanova, Electrical EngineeringEngineeringVlsi DesignCircuit SystemMeasurement	2015	20
Radiation-induced degradation in the dynamic parameters of memory chips Anna B. Boruzdina, Anastasia V. Ulanova, N. G. Grigor’ev, Russian Microelectronics	2012	17
Effect of topological placement of memory cells in memory chips on multiplicity of cell upsets from heavy charged particles Anna B. Boruzdina, N. G. Grigor’ev, Anastasia V. Ulanova Russian Microelectronics	2014	14
A simple analytical model of single-event upsets in bulk CMOS Armen V. Sogoyan, A. I. Chumakov, Anatoly A. Smolin, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Hardware SecurityElectrical EngineeringEngineeringHardware ReliabilityComputer Engineering	2017	13
Basic trends in electronic components product range development: Radiation hardness aspects Alexander Y. Nikiforov, Dmitry V. Boychenko, V. A. Telets, MiniaturizationEngineeringElectronic DesignDefect ToleranceBasic Trends	2017	11
Infrared focal plane array FPA320&#x00D7;256 radiation hardness investigation Maksim E. Cherniak, Anastasia V. Ulanova, Alexander Y. Nikiforov Radiation Hardness InvestigationUniform IlluminationEngineeringRadiation DetectionOphthalmology	2014	10

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