Takayoshi Miura

Comparison between SiO2 films deposited by atomic layer deposition with SiH2[N(CH3)2]2 and SiH[N(CH3)2]3 precursors

Satoshi Kamiyama, Takayoshi Miura, Yasuo Nara · Thin Solid Films · 2006 · 74 citations

Natural Sciences, Materials Engineering, Materials Science +13

Electrical properties of ultrathin HfO2 films for replacement metal gate transistors, fabricated by atomic layer deposition using Hf(N(CH3)(C2H5))4 and O3

Satoshi Kamiyama, Takayoshi Miura, Yasuo Nara · Applied Physics Letters · 2005 · 36 citations

Natural Sciences, Materials Engineering, Materials Science +17

Atomic Layer Deposition of Hafnium Silicate Gate Dielectric Films Using Hf[N(CH[sub 3])(C[sub 2]H[sub 5])][sub 4] and SiH[N(CH[sub 3])[sub 2]][sub 3] Precursors

Satoshi Kamiyama, Takayoshi Miura, Yasuo Nara et al. · Electrochemical and Solid-State Letters · 2005 · 28 citations

Engineering, Materials Engineering, Materials Science +16

Electrical properties of 0.5 nm thick Hf-silicate top-layer∕HfO2 gate dielectrics by atomic layer deposition

Satoshi Kamiyama, Takayoshi Miura, Yasuo Nara et al. · Applied Physics Letters · 2005 · 22 citations

Natural Sciences, Materials Engineering, Materials Science +17

Comparison Between Hf-Silicate Films Deposited by ALD with BDMAS [SiH[sub 2](N(CH[sub 3])[sub 2])[sub 2]] and TDMAS [SiH(N(CH[sub 3])[sub 2])[sub 3]] Precursors

Satoshi Kamiyama, Takayoshi Miura, Yasuo Nara · Electrochemical and Solid-State Letters · 2005 · 18 citations

Natural Sciences, Materials Engineering, Materials Science +11