Takayoshi Miura - Concepedia

Author

Takayoshi Miura

Tokyo Electron (Japan)

Also Known As

Takayoshi MIURA, Takayoshi Miura

Publications

279

Citations

H-Index

Concepts

All Affiliations

Tokyo Electron (Japan)

About

Takayoshi Miura is an author at Tokyo Electron (Japan) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	232
2	Applied Physics	8	8	214
3	Electrical Engineering	6	6	114
4	Chemistry	2	2	90
5	Chemical Engineering	1	1	17

Takayoshi Miura

Publications

232

Citations

H-Index

Page 1

	Year	Citations
Comparison between SiO2 films deposited by atomic layer deposition with SiH2[N(CH3)2]2 and SiH[N(CH3)2]3 precursors Satoshi Kamiyama, Takayoshi Miura, Yasuo Nara Thin Solid Films EngineeringNanoelectronicsSilicon On InsulatorSurface ScienceApplied Physics	2006	72
Electrical properties of ultrathin HfO2 films for replacement metal gate transistors, fabricated by atomic layer deposition using Hf(N(CH3)(C2H5))4 and O3 Satoshi Kamiyama, Takayoshi Miura, Yasuo Nara Applied Physics Letters Materials ScienceHfo2 FilmsElectrical EngineeringDielectric ConstantUltrathin Hfo2 Films	2005	36
Atomic Layer Deposition of Hafnium Silicate Gate Dielectric Films Using Hf[N(CH[sub 3])(C[sub 2]H[sub 5])][sub 4] and SiH[N(CH[sub 3])[sub 2]][sub 3] Precursors Satoshi Kamiyama, Takayoshi Miura, Yasuo Nara, Electrochemical and Solid-State Letters Materials ScienceSub 2Material AnalysisHigh Temperature MaterialsEngineering	2005	28
Electrical properties of 0.5 nm thick Hf-silicate top-layer∕HfO2 gate dielectrics by atomic layer deposition Satoshi Kamiyama, Takayoshi Miura, Yasuo Nara, Applied Physics Letters EngineeringHfo2 Gate StructuresThin Film Process TechnologySilicon On InsulatorElectrical Properties	2005	22
Comparison Between Hf-Silicate Films Deposited by ALD with BDMAS [SiH[sub 2](N(CH[sub 3])[sub 2])[sub 2]] and TDMAS [SiH(N(CH[sub 3])[sub 2])[sub 3]] Precursors Satoshi Kamiyama, Takayoshi Miura, Yasuo Nara Electrochemical and Solid-State Letters Materials ScienceMaterials EngineeringSub 2Material AnalysisTdmas Precursors	2005	18
Impact of O[sub 3] Concentration on Ultrathin HfO[sub 2] Films Deposited on HF-Cleaned Silicon Using Atomic Layer Deposition with Hf[N(CH[sub 3])(C[sub 2]H[sub 5])][sub 4] Satoshi Kamiyama, Takayoshi Miura, Yasuo Nara Electrochemical and Solid-State Letters EngineeringUltrathin Gate DielectricThin Film Process TechnologySilicon On InsulatorSemiconductor Device	2006	17
Ultrathin HfO[sub 2] Films Treated by Xenon Flash Lamp Annealing for Use as Transistor Gate Dielectric Replacements Satoshi Kamiyama, Takayoshi Miura, Yasuo Nara Electrochemical and Solid-State Letters Materials ScienceMaterials EngineeringElectrical EngineeringGate DielectricsEngineering	2005	15
Impact of Interface Layer Nitrogen Concentration on HfO[sub 2]∕Hf-Silicate/Poly-Si–Based MOSFET Performance Satoshi Kamiyama, Takayoshi Miura, Yasuo Nara Journal of The Electrochemical Society Materials ScienceNitrogen ConcentrationElectrical EngineeringSemiconductor TechnologyEngineering	2005	13
Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing Seiji Inumiya, Takayoshi Miura, Kiyoshi Shirai, Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringNanoelectronics	2006	11

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