Atomic Layer Deposition of Hafnium Silicate Gate Dielectric Films Using Hf[N(CH[sub 3])(C[sub 2]H[sub 5])][sub 4] and SiH[N(CH[sub 3])[sub 2]][sub 3] Precursors

Abstract

Hf-silicate gate dielectrics were formed by atomic layer deposition (ALD) technology using the liquid and precursors. The advantages of these precursors as good materials is because their melting points and vapor pressures are in a comfortable working range. In ALD film formation, the growth rate per cycle was dependent on reactor pressures between 0.5 and 5.0 Torr chamber pressure. In order to obtain a good uniformity of less than 5%, the pressures of the reactor chamber were kept at 0.5 and 5.0 Torr for ALD of and ALD of films, respectively. The precursor made it possible to deposit the layers not only on films but also on films. Hf-silicate films were deposited at 275°C using alternating and ALD cycles. The thickness and the compositions of Hf-silicate films could be easily controlled by the number of the deposition cycles.