Bhaswar Chakrabarti - Concepedia

Author

Bhaswar Chakrabarti

Also Known As

B. Chakrabarti, B.B. Chakrabarti, Bhaswar Chakrabarti, Chakrabarti, B., Chakrabarti, Bhaswar, Chakrabarti, Bhaswar; Ocola, Leonidas E.; Guha, Supratik; Sonde, Sushant

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

Georgia Institute of Technology University of California, Santa Barbara The University of Texas at Dallas Indian Institute of Technology Madras University of Chicago

About

Bhaswar Chakrabarti is an author at Georgia Institute of Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	625
2	Applied Physics	10	10	542
3	Natural Sciences	1	1	16
4	Social Sciences	1	1	28
5	Chemical Engineering	1	1	33

Bhaswar Chakrabarti

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits F. Merrikh Bayat, M. Prezioso, Bhaswar Chakrabarti, Nature Communications	2018	370
3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications Gina C. Adam, Brian D. Hoskins, M. Prezioso, IEEE Transactions on Electron Devices EngineeringDemonstrated Crossbar CircuitEmerging Memory TechnologyIntegrated CircuitsNeurochip	2016	226
A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit Bhaswar Chakrabarti, Miguel Ángel Lastras-Montaño, Gina C. Adam, Scientific Reports	2017	96
Random telegraph noise (RTN) in scaled RRAM devices Dmitry Veksler, G. Bersuker, Luca Vandelli, Non-volatile MemoryElectrical EngineeringEngineeringPhysicsBias Temperature Instability	2013	92
Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics Dmitry Veksler, G. Bersuker, Bhaswar Chakrabarti, Electrical EngineeringEngineeringRram CharacteristicsStatistical EvaluationRandom Telegraph Noise	2012	55
Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions Tania Roy, Lei Liu, Sergio C. de la Barrera, Applied Physics Letters EngineeringSemiconductorsGraphene-based Nano-antennasElectronic DevicesTunneling Microscopy	2014	55
Multilevel Switching in Forming-Free Resistive Memory Devices With Atomic Layer Deposited ${\rm HfTiO}_{x}$ Nanolaminate Bhaswar Chakrabarti, Rohit Galatage, Eric M. Vogel IEEE Electron Device Letters Non-volatile MemoryEngineeringEmerging Memory TechnologyMultilevel Switching\Rm Hftio	2013	40
Cleaning graphene with a titanium sacrificial layer Corey A. Joiner, Tania Roy, Z. Razavi Hesabi, Applied Physics Letters Materials ScienceGraphene NanomeshesChemical EngineeringGraphene-based Nano-antennasEngineering	2014	33
Silicon compatible Sn-based resistive switching memory Sushant Sonde, Bhaswar Chakrabarti, Yuzi Liu, Nanoscale	2018	31
Memristor-based perceptron classifier: Increasing complexity and coping with imperfect hardware F. Merrikh Bayat, M. Prezioso, Bhaswar Chakrabarti, 2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD) EngineeringEmerging Memory TechnologyIntegrated CircuitsSocial SciencesMemory Device	2017	28

Page 1