Arash Salemi

Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs

Tianshi Liu, Shengnan Zhu, Marvin H. White et al. · IEEE Journal of the Electron Devices Society · 2021 · 65 citations · Full text

Electrical Engineering, Engineering, High Voltage Engineering +13

15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain

Arash Salemi, Hossein Elahipanah, Keijo Jacobs et al. · IEEE Electron Device Letters · 2017 · 46 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +12

Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs

Shengnan Zhu, Tianshi Liu, Marvin H. White et al. · 2021 · 41 citations

Commercial 1.2, Electrical Engineering, Engineering +14

5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension

Hossein Elahipanah, Arash Salemi, Carl‐Mikael Zetterling et al. · IEEE Electron Device Letters · 2014 · 29 citations · Full text

Semiconductor Technology, Electrical Engineering, Engineering +8

500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits

Hossein Elahipanah, Saleh Kargarrazi, Arash Salemi et al. · IEEE Electron Device Letters · 2017 · 29 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +10