Hossein Elahipanah

15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain

Arash Salemi, Hossein Elahipanah, Keijo Jacobs et al. · IEEE Electron Device Letters · 2017 · 46 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +12

Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field‐Effect Transistors: A Quantum Simulation Study

Ali Naderi, S. Mohammad Noorbakhsh, Hossein Elahipanah · Journal of Nanomaterials · 2012 · 37 citations · Full text

A 1300-V 0.34-$\Omega\cdot\hbox{cm}^{2}$ Partial SOI LDMOSFET With Novel Dual Charge Accumulation Layers

Hossein Elahipanah, Ali A. Orouji · IEEE Transactions on Electron Devices · 2010 · 30 citations

Vertical Breakdown Voltage, Engineering, Power Electronics +16

5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension

Hossein Elahipanah, Arash Salemi, Carl‐Mikael Zetterling et al. · IEEE Electron Device Letters · 2014 · 29 citations · Full text

Semiconductor Technology, Electrical Engineering, Engineering +8

500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits

Hossein Elahipanah, Saleh Kargarrazi, Arash Salemi et al. · IEEE Electron Device Letters · 2017 · 29 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +10