B. S. Shelton

Back illuminated AlGaN solar-blind photodetectors

Damien Lambert, M.M. Wong, U. Chowdhury et al. · Applied Physics Letters · 2000 · 86 citations

Materials Science, Semiconductors, Electrical Engineering +15

High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching

Ting Zhu, Damien Lambert, B. S. Shelton et al. · Applied Physics Letters · 2000 · 66 citations

Electrical Engineering, Engineering, High Voltage Engineering +9

Design of edge termination for GaN power Schottky diodes

J. R. LaRoche, F. Ren, K. W. Baik et al. · Journal of Electronic Materials · 2005 · 42 citations

Electrical Engineering, Engineering, Applied Physics +4

Radiative recombination of two-dimensional electrons in a modulation-doped Al0.37Ga0.63N/GaN single heterostructure

Ho Ki Kwon, C. J. Eiting, Damien Lambert et al. · Applied Physics Letters · 1999 · 37 citations

Radiative Recombination, Wide-bandgap Semiconductor, Two-dimensional Electrons +11

AlGaN/GaN heterojunction bipolar transistors grownbymetal organic chemical vapour deposition

B. S. Shelton, Jian‐Jang Huang, Damien Lambert et al. · Electronics Letters · 2000 · 36 citations