Jian‐Jang Huang

Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

Finella Lee, Liang-Yu Su, Chih‐Hao Wang et al. · IEEE Electron Device Letters · 2015 · 137 citations

Engineering, Electrical Engineering, Materials Science +17

Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer

Liang-Yu Su, Finella Lee, Jian‐Jang Huang · IEEE Transactions on Electron Devices · 2014 · 128 citations

Engineering, Electrical Engineering, Materials Science +17

Characterizations of Amorphous IGZO Thin-Film Transistors With Low Subthreshold Swing

Liang-Yu Su, Hsin-Ying Lin, Huang‐Kai Lin et al. · IEEE Electron Device Letters · 2011 · 121 citations

Engineering, Electrical Engineering, Materials Science +17

Device Technologies for RF Front-End Circuits in Next-Generation Wireless Communications

M. Feng, S.C. Shen, D. Caruth et al. · Proceedings of the IEEE · 2004 · 104 citations

Engineering, Electrical Engineering, Microelectronics +16

GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength

Chengyin Wang, Liangyi Chen, Cheng‐Pin Chen et al. · Optics Express · 2008 · 101 citations · Full text

Engineering, Electrical Engineering, Materials Science +17