P. S. Plekhanov

A 14nm logic technology featuring 2<sup>nd</sup>-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm<sup>2</sup> SRAM cell size

S. Natarajan, M. Agostinelli, Sheikh A. Akbar et al. · 2014 · 532 citations

Engineering, Computer Engineering, Electrical Engineering +16

Field emission from silicon spikes with diamond coatings

V.V. Zhirnov, E. I. Givargizov, P. S. Plekhanov · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 108 citations

Engineering, Electrical Engineering, Physics +12

Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications

P. S. Plekhanov, R. Gafiteanu, U. Gösele et al. · Journal of Applied Physics · 1999 · 88 citations

Engineering, Materials Engineering, Materials Science +17

Microstructure and field emission of diamond particles on silicon tips

E. I. Givargizov, V.V. Zhirnov, A.N. Stepanova et al. · Applied Surface Science · 1995 · 77 citations

Natural Sciences, Materials Science, Physics +11

Low-k interconnect stack with multi-layer air gap and tri-metal-insulator-metal capacitors for 14nm high volume manufacturing

K. Fischer, M. Agostinelli, C. Allen et al. · 2015 · 68 citations

Engineering, Computer Engineering, Electrical Engineering +14