J. V. Seiple

A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging

K. Mistry, R. Chau, Changhwan Choi et al. · 2007 · 825 citations

Nm Logic Technology, Engineering, Vlsi Design +18

A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors

C. Auth, C. Allen, A. Blattner et al. · 2012 · 749 citations

Low-power Cmos Technology, Engineering, Vlsi Design +19

High performance 32nm logic technology featuring 2<sup>nd</sup> generation high-k + metal gate transistors

P. Packan, Sheikh A. Akbar, M Armstrong et al. · 2009 · 184 citations

Nm Logic Technology, Electrical Engineering, Engineering +13

A 32nm logic technology featuring 2<sup>nd</sup>-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm<sup>2</sup> SRAM cell size in a 291Mb array

S. Natarajan, M Armstrong, M. Bost et al. · 2008 · 184 citations

Engineering, Vlsi Design, Channel Strain +17

Scanning Tunneling Microscopy study of Oxide Nucleation and Oxidation-Induced Roughening at Elevated Temperatures on the Si(001)-(2 × 1) Surface

J. V. Seiple, J. P. Pelz · Physical Review Letters · 1994 · 77 citations

Materials Science, Room Temperature, Nucleation Rate +15