C. Y. Chen

Intrinsic program instability in HfO2 RRAM and consequences on program algorithms

A. Fantini, Georgi Gorine, R. Degraeve et al. · 2015 · 75 citations

Non-volatile Memory, Engineering, Memory Design +21

Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

C. Y. Chen, L. Goux, A. Fantini et al. · Applied Physics Letters · 2015 · 45 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Programming-conditions solutions towards suppression of retention tails of scaled oxide-based RRAM

C. Y. Chen, A. Fantini, L. Goux et al. · 2015 · 25 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO<inf>3</inf>\Al<inf>2</inf>O<inf>3</inf>\Cu CBRAM

L. Goux, Attilio Belmonte, Umberto Celano et al. · 2016 · 14 citations

Engineering, Hour-glass Filament Shape, Glass Material +20

Novel Flexible and Cost-Effective Retention Assessment Method for TMO-Based RRAM

C. Y. Chen, A. Fantini, L. Goux et al. · IEEE Electron Device Letters · 2016 · 12 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17