Dokshin Lim

Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

J.H. Oh, J.H. Park, Yong Lim et al. · 2006 · 138 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +19

A simple and unambiguous definition of threshold voltage and its implications in deep-submicron MOS device modeling

Xing Zhou, Kenneth Y. T. Lim, Dokshin Lim · IEEE Transactions on Electron Devices · 1999 · 75 citations

Low-power Electronics, Device Modeling, Electrical Engineering +13

A general approach to compact threshold voltage formulation based on 2D numerical simulation and experimental correlation for deep-submicron ULSI technology development [CMOS]

Xing Zhou, Khee Yong Lim, Dokshin Lim · IEEE Transactions on Electron Devices · 2000 · 38 citations

Low-power Electronics, Device Modeling, Electrical Engineering +14

Highly Reliable 256Mb PRAM with Advanced Ring Contact Technology and Novel Encapsulating Technology

Yangkun Song, Kyung‐Chang Ryoo, Y.N. Hwang et al. · 2006 · 37 citations

Ring Type, Electrical Engineering, Highly Reliable 256Mb +15

Integrated modular fixture design, pricing and inventory control expert system

Lim Beng Siong, T. IMAO, Hironori Yoshida et al. · International Journal of Production Research · 1992 · 20 citations

Supply Chain Optimization, Engineering, Industrial Engineering +21