J. P. Praseuth - Concepedia

Author

J. P. Praseuth

Orange (France)

Also Known As

J P. Praseuth, J. P. PRASEUTH, J. P. Praseuth, J.-P. Praseuth, J.P. Praseuth, Jean-Pierre Praseuth

Publications

301

Citations

H-Index

Concepts

All Affiliations

Orange (France)Laboratoire d'Étude des Microstructures Centre National de la Recherche Scientifique

About

J. P. Praseuth is an author at Orange (France) specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	193
2	Applied Physics	7	7	193
3	Materials Science	4	4	142
4	Electrical Engineering	2	2	38
5	Materials Engineering	1	1	13

J. P. Praseuth

Publications

260

Citations

H-Index

Page 1

	Year	Citations
Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxy J. P. Praseuth, Leon J. Goldstein, P. Hénoc, Journal of Applied Physics Aluminium NitrideOptical MaterialsEngineeringCrystal Growth TechnologySemiconductor Nanostructures	1987	72
Waveguide AlInAs/GaAlInAs avalanche photodiode witha gain-bandwidthproduct over 160 GHz C. Cohen-Jonathan, L. Giraudet, A. Bonzo, Electronics Letters	1997	40
Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy J. P. Praseuth, M. C. Joncour, Jean‐Michel Gérard, Journal of Applied Physics Materials ScienceAluminium NitrideIi-vi SemiconductorOptical MaterialsMolecular-beam Epitaxy	1988	39
Double-heterojunction GaAlInAs/GaInAs bipolar transistor grown by molecular beam epitaxy Jean-Luc Pélouard, P. Hesto, J. P. Praseuth, IEEE Electron Device Letters Electrical EngineeringEngineeringSmall Bandgap SpacerCollector JunctionApplied Physics	1986	20
Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP Alain Sylvestre, F. Aniel, P. Boucaud, Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1996	18
Dependence of conduction-band effective mass on quaternary alloy composition of (In0.52Al0.48As)<i>z</i>(In0.53Ga0.47As)1−<i>z</i> lattice matched to InP L. A. Cury, J. Beerens, J. P. Praseuth Applied Physics Letters Materials ScienceSemiconductorsEngineeringQuaternary Alloy CompositionCrystalline Defects	1993	16
Continuous molecular beam epitaxy of arsenides and phosphides applied to device structures on InP substrates Jean‐Christophe Harmand, J. P. Praseuth, E. Idiart-Alhor, Journal of Crystal Growth Materials ScienceEngineeringInp SubstratesApplied PhysicsSemiconductor Material	1995	15
Very low threshold current density GaInAs/AlGaInAs MQW lasers made by phosphorus-free MBE and operating in 1.5–1.6 μm range M. Quillec, M. Allovon, F. Brillouet, Electronics Letters	1989	14
Molecular Beam Epitaxy Grown Al ( Ga ) InAs : Schottky Contacts and Deep Levels C. Schramm, H.-G. Bach, H. Künzel, Journal of The Electrochemical Society	1991	13
MBE growth of AlxGayIn1−x−yAs for a DHBT structure Leon J. Goldstein, J. P. Praseuth, M. C. Joncour, Journal of Crystal Growth Materials EngineeringEngineeringCrystal Growth TechnologyMbe GrowthApplied Physics	1987	13

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