J. P. Praseuth

Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxy

J. P. Praseuth, Leon J. Goldstein, P. Hénoc et al. · Journal of Applied Physics · 1987 · 72 citations

Aluminium Nitride, Optical Materials, Engineering +20

Waveguide AlInAs/GaAlInAs avalanche photodiode witha gain-bandwidthproduct over 160 GHz

C. Cohen-Jonathan, L. Giraudet, A. Bonzo et al. · Electronics Letters · 1997 · 40 citations

Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy

J. P. Praseuth, M. C. Joncour, Jean‐Michel Gérard et al. · Journal of Applied Physics · 1988 · 39 citations

Materials Science, Aluminium Nitride, Ii-vi Semiconductor +15

Double-heterojunction GaAlInAs/GaInAs bipolar transistor grown by molecular beam epitaxy

Jean-Luc Pélouard, P. Hesto, J. P. Praseuth et al. · IEEE Electron Device Letters · 1986 · 20 citations

Electrical Engineering, Engineering, Small Bandgap Spacer +5

Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP

Alain Sylvestre, F. Aniel, P. Boucaud et al. · Journal of Applied Physics · 1996 · 18 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11