Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxy

Abstract

An investigation of the crystalline and optical properties of AlInAs as a function of the molecular-beam epitaxial growth conditions is reported. The surface reconstruction phases diagram has been established. We show the possibility of growing this material with smooth surface under (Al-In)-stabilized (4×2) reconstructed surface. Such layers present a specific photoluminescence behavior; transmission electron microscopy observations suggest the existence of spinodal decomposition. Films grown under usual (2×4) surface show 2-K photoluminescence peak as narrow as 16 meV (FWHM), but we found that no correlation may be established a priori between the optical and crystalline properties. A high silicon doping study is also reported. We show the segregation and accumulation of Si toward the surface at high level.