A. A. Bernussi

Effect of stress and free-carrier concentration on photoluminescence in InN

D. Y. Song, M. Holtz, A. Chandolu et al. · Applied Physics Letters · 2008 · 32 citations

Engineering, Materials Engineering, Materials Science +17

Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration

M. Holtz, Iulian Gherasoiu, V. Kuryatkov et al. · Journal of Applied Physics · 2009 · 23 citations

Natural Sciences, Materials Science, Physics +17

InGaAs/InP quantum wells with thickness modulation

M. J. S. P. Brasil, A. A. Bernussi, M. A. Cotta et al. · Applied Physics Letters · 1994 · 14 citations · Full text

Engineering, Materials Science, Physics +17

Transmission properties of nanoscale aperture arrays in metallic masks on optical fibers

Longlong Tian, S. Frisbie, A. A. Bernussi et al. · Journal of Applied Physics · 2007 · 14 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

Influence of photonic nanotexture on the light extraction efficiency of GaN

Lin Tian, Nenad Stojanović, D. Y. Song et al. · Applied Physics Letters · 2007 · 11 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17