Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration

Abstract

We report the temperature dependence of photoluminescence (PL) spectra for InN. For a free-carrier concentration n=5.9×1017 cm−3 and low temperature, the main PL band is observed at 0.669 eV. The PL shift and broadening are described from 20 to 300 K based on electron-phonon interactions. Two discrete phonon sidebands (PSBs) are observed with corresponding phonon energy of ∼69 meV. The PSB temperature shift and linewidth broadening are well described by previous theory.