M. J. S. P. Brasil - Concepedia

Author

M. J. S. P. Brasil

Universidade Estadual de Campinas (UNICAMP)

Also Known As

M J S Brasil, M J S P Brasil, M. J. Brasil, M. J. S. P Brasil, M. J. S. P. Brasil, M.J.S.P Brasil, M.J.S.P. Brasil, Marcelo Brasil

106

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

Universidade Estadual de Campinas (UNICAMP)Universidade Federal de São Carlos Brazilian Synchrotron Light Laboratory University of Sheffield University of Nottingham

About

M. J. S. P. Brasil is an author at Universidade Estadual de Campinas (UNICAMP) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	39	1.2K
2	Applied Physics	17	39	1.2K
3	Natural Sciences	13	13	435
4	Electrical Engineering	8	8	211
5	Chemistry	5	5	112

M. J. S. P. Brasil

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Growth of AlxGa1−<i>x</i>As parabolic quantum wells by real-time feedback control of composition D. E. Aspnes, W. E. Quinn, M. C. Tamargo, Applied Physics Letters Aluminium NitrideOptical MaterialsEngineeringReal-time Feedback ControlSemiconductor Nanostructures	1992	111
Coulomb Correlation and Band Gap Renormalization at High Carrier Densities in Quantum Wires R. Ambigapathy, I. Bar‐Joseph, D. Y. Oberli, Physical Review Letters Categoryquantum ElectronicsQuantum SciencePhotonicsPhotoluminescenceEngineering	1997	101
Aharonov-Bohm Interference in Neutral Excitons: Effects of Built-In Electric Fields M. D. Teodoro, V. L. Campo, Victor Lopez‐Richard, Physical Review Letters Localized Excited StateEngineeringPolariton DynamicQuantum ComputingQuantum Materials	2010	89
Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and<i>ab initio</i>calculations E. G. Gadret, Guilherme Osvaldo Dias, Luis C. O. Dacal, Physical Review B EngineeringWurtzite Inp NanowiresElectronic PropertiesSemiconductor NanostructuresSemiconductors	2010	71
Evolution of the band gap and the dominant radiative recombination center versus the composition for ZnSe1−<i>x</i>Te<i>x</i> alloys grown by molecular beam epitaxy M. J. S. P. Brasil, R. E. Nahory, F. S. Turco-Sandroff, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesBand GapSemiconductor Nanostructures	1991	69
Absence of ferromagnetic order in high quality bulk Co-doped ZnO samples H. B. de Carvalho, Marcio Peron Franco de Godoy, R. W. D. Paes, Journal of Applied Physics Magnetic PropertiesEngineeringLow-dimensional MagnetismMagnetic ResonanceCo-doped Zno Samples	2010	60
Interface control in GaAs/GaInP superlattices grown by OMCVD R. Bhat, M.A. Koza, M. J. S. P. Brasil, Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsInterface ControlMolecular Beam Epitaxy	1992	55
MBE growth of the (Zn,Cd)(Se,Te) system for wide-bandgap heterostructure lasers M. C. Tamargo, M. J. S. P. Brasil, R. E. Nahory, Semiconductor Science and Technology Materials ScienceWide-bandgap SemiconductorElectrical EngineeringOptical MaterialsEngineering	1991	53
Ferromagnetic nanoclusters formed by Mn implantation in GaAs O. D. D. Couto, M. J. S. P. Brasil, F. Iikawa, Applied Physics Letters Magnetic PropertiesEngineeringNanoclusterMagnetic ResonanceGaas Samples	2005	37
Optical transitions and chemistry at the In0.52Al0.48As/InP interface M. J. S. P. Brasil, R. E. Nahory, W. E. Quinn, Applied Physics Letters Optical MaterialsEngineeringType Ii InterfaceCrystal Growth TechnologyInalas/inp Interface	1992	36

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