Heli Vora

Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration

Han Wui Then, M. Radosavljević, Pratik Koirala et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 66 citations

Engineering, Electrical Engineering, Materials Science +17

Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications

Han Wui Then, M. Radosavljević, Qiang Yu et al. · IEEE Microwave and Wireless Technology Letters · 2023 · 36 citations

Engineering, Electrical Engineering, Materials Science +15

Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (R_ON xQ_GG) of 3.1 mohm-nC at 40V and f_T/f_MAX of 130/680GHz

Han Wui Then, M. Radosavljević, Pratik Koirala et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

DrGaN: an Integrated CMOS Driver-GaN Power Switch Technology on 300mm GaN-on-Si with E-mode GaN MOSHEMT and 3D Monolithic Si PMOS

Han Wui Then, M. Radosavljević, Samuel James Bader et al. · 2023 · 18 citations

Engineering, Electrical Engineering, Microelectronics +16

A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology

Qiang Yu, Derek Thomson, Han Wui Then et al. · 2022 · 11 citations

Engineering, Electrical Engineering, Microelectronics +16