Frank Wischmeyer

Micropipes and voids at β¨SiC/Si(100) interfaces: an electron microscopy study

Roland W. Scholz, U. Gösele, E. Niemann et al. · Applied Physics A · 1997 · 43 citations

Materials Science, Engineering, Microfabrication +6

High temperature piezoresistive β-SiC-on-SOI pressure sensor with on chip SiC thermistor

R. Ziermann, J. von Berg, Frank Wischmeyer et al. · Materials Science and Engineering B · 1999 · 33 citations

Electrical Engineering, Chip Sic Thermistor, Engineering +6

Prevention of micropipes and voids at β-SiC/Si(100) interfaces

Roland W. Scholz, U. Gösele, Frank Wischmeyer et al. · Applied Physics A · 1998 · 31 citations

Semiconductor Device Fabrication, Applied Physics, Carbide +1

High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor

Christian Hecht, René Stein, Bernd Thomas et al. · Materials science forum · 2010 · 20 citations

Materials Engineering, Electrical Engineering, Wafer Scale Processing +11

Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation

G. Rutsch, Robert P. Devaty, W. J. Choyke et al. · Materials science forum · 2000 · 16 citations

Semiconductor Technology, Electrical Engineering, Engineering +7