R. Kleinhenz

EPR of a thermally induced defect in silicon

Y. H. Lee, R. Kleinhenz, J. W. Corbett · Applied Physics Letters · 1977 · 102 citations

Engineering, Silicon On Insulator, Semiconductors +16

EPR Observation of an Au‐Fe Complex in Silicon: I. Experimental Data

R. Kleinhenz, Y. H. Lee, J. W. Corbett et al. · physica status solidi (b) · 1981 · 49 citations

Engineering, Au‐fe Complex, Magnetic Resonance +19

Trench storage node technology for gigabit DRAM generations

K.P. Müller, B. Flietner, C. Hwang et al. · 2002 · 26 citations

Engineering, Emerging Memory Technology, Computer Architecture +18

A fully planarized 0.25 μm CMOS technology for 256 Mbit DRAM and beyond

G. Bronner, H. Aochi, M. Gall et al. · 2002 · 25 citations

Engineering, Vlsi Design, Emerging Memory Technology +16

Quenched-in defects in flashlamp-annealed silicon

J. T. Borenstein, J. T. Jones, J. W. Corbett et al. · Applied Physics Letters · 1986 · 24 citations

Electrical Engineering, Deep Levels, Engineering +14