EPR of a thermally induced defect in silicon

Abstract

Two EPR spectra are resolved in quenched silicon; one is attributed to a surface damage formed during the quench and the other to the interstitial iron (Fe0) previously identified by Woodbury and Ludwig in Fe-diffused silicon. The enthalpy and entropy for the Fe0 formation are determined to be 2.39 (±0.03) eV and 3.3 (±0.3) K, respectively. The migration energy of Fe0 is 0.69 (±0.03) eV. The transition-metal ion is present in as-grown silicon and moves to the Td interstitial site upon heat treatment.