Anuj Madan

A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology

Anuj Madan, Michael J. McPartlin, Christophe Masse et al. · IEEE Microwave and Wireless Components Letters · 2012 · 65 citations

Ghz 0.95, Engineering, Vlsi Design +12

High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL

W.-H. Lee, Anya M. Waite, H. Nii et al. · 2006 · 55 citations

Engineering, Vlsi Design, Integrated Circuits +19

Novel Enhanced Stressor with Graded Embedded SiGe Source/Drain for High Performance CMOS Devices

M. Ieong, J. Sudijono, J.-H. Ku et al. · 2006 · 25 citations

Electrical Engineering, Semiconductor Device, Engineering +13

The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI

Anuj Madan, Rohan Verma, Rajan Arora et al. · IEEE Transactions on Nuclear Science · 2009 · 23 citations

Shallow-trench Isolation, Engineering, Radiation Exposure +18

Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs

Rajan Arora, Eddy Simoen, En Xia Zhang et al. · IEEE Transactions on Nuclear Science · 2010 · 17 citations

Total-dose Effects, Semiconductor Technology, Electrical Engineering +14