K. G. Aubuchon

Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate Insulator

K. G. Aubuchon · IEEE Transactions on Nuclear Science · 1971 · 122 citations

Electrical Engineering, Radiation Hardening, Engineering +15

MOS field effect transistors formed by gate masked ion implantation

R.W. Bower, H.G. Dill, K. G. Aubuchon et al. · IEEE Transactions on Electron Devices · 1968 · 56 citations

Electrical Engineering, Ion Implantation, Engineering +12

A complementary MOS 1.2 volt watch circuit using ion implantation

P.J. Coppen, K. G. Aubuchon, Lara Bauer et al. · Solid-State Electronics · 1972 · 36 citations

Low-power Electronics, Electrical Engineering, Ion Implantation +5

Radiation Effects in Modified Oxide Insulators in MOS Structures

C. W. Perkins, K. G. Aubuchon, H.G. Dill · IEEE Transactions on Nuclear Science · 1968 · 25 citations

Radiation-induced Permanent Shifts, Electrical Engineering, Ion Implantation +13

RADIATION EFFECTS AND ELECTRICAL STABILITY OF METAL-NITRIDE-OXIDE-SILICON STRUCTURES

C. W. Perkins, K. G. Aubuchon, H.G. Dill · Applied Physics Letters · 1968 · 23 citations

Electrical Engineering, Semiconductor Device, Engineering +9