Concepedia

Author

K. G. Aubuchon

HRL Laboratories (United States)

Also Known As

E Barsis, K. Aubuchon, K. G. Aubuchon, K.G. Aubuchon, Kenneth G. Aubuchon

19

Publications

317

Citations

8

H-Index

19

Concepts

All Affiliations

HRL Laboratories (United States)
KG

About

K. G. Aubuchon is an author at HRL Laboratories (United States) specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

7

7

291

2

Electrical Engineering

7

7

291

3

Applied Physics

5

5

241

4

Computer Engineering

1

1

14

5

Materials Engineering

1

1

15

K. G. Aubuchon

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7

Publications

291

Citations

7

H-Index

YearCitations

Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate Insulator

K. G. Aubuchon

IEEE Transactions on Nuclear Science

1971

122

MOS field effect transistors formed by gate masked ion implantation

R.W. Bower, H.G. Dill, K. G. Aubuchon,

IEEE Transactions on Electron Devices

1968

56

A complementary MOS 1.2 volt watch circuit using ion implantation

P.J. Coppen, K. G. Aubuchon, Lara Bauer,

Solid-State Electronics

1972

36

Radiation Effects in Modified Oxide Insulators in MOS Structures

C. W. Perkins, K. G. Aubuchon, H.G. Dill

IEEE Transactions on Nuclear Science

1968

25

RADIATION EFFECTS AND ELECTRICAL STABILITY OF METAL-NITRIDE-OXIDE-SILICON STRUCTURES

C. W. Perkins, K. G. Aubuchon, H.G. Dill

Applied Physics Letters

1968

23

Effects of HCL gettering, CR doping and AL<sup>+</sup> implantation on hardened SiO<sub>2</sub>

K. G. Aubuchon, E. Harari, D Leong

IEEE Transactions on Nuclear Science

1974

15

Radiation Hardened CMOS/SOS

K. G. Aubuchon, E. Harari

IEEE Transactions on Nuclear Science

1975

14

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