H.G. Dill

MOS field effect transistors formed by gate masked ion implantation

R.W. Bower, H.G. Dill, K. G. Aubuchon et al. · IEEE Transactions on Electron Devices · 1968 · 56 citations

Electrical Engineering, Ion Implantation, Engineering +12

Radiation Effects in Modified Oxide Insulators in MOS Structures

C. W. Perkins, K. G. Aubuchon, H.G. Dill · IEEE Transactions on Nuclear Science · 1968 · 25 citations

Radiation-induced Permanent Shifts, Electrical Engineering, Ion Implantation +13

RADIATION EFFECTS AND ELECTRICAL STABILITY OF METAL-NITRIDE-OXIDE-SILICON STRUCTURES

C. W. Perkins, K. G. Aubuchon, H.G. Dill · Applied Physics Letters · 1968 · 23 citations

Electrical Engineering, Semiconductor Device, Engineering +9

A new MNOS charge storage effect

H.G. Dill, T.N. Toombs · Solid-State Electronics · 1969 · 22 citations

Engineering, Applied Physics, Energy Storage +5

A new insulated gate tetrode with high drain breakdown potential and low miller feedback capacitance

H.G. Dill · IEEE Transactions on Electron Devices · 1968 · 19 citations

Device Modeling, Electrical Engineering, Drain Breakdown Potentials +11