H.C. Duran

Two-channel 5 Gbit/s silicon bipolar monolithicreceiver for parallel optical interconnects

J. Wieland, H.C. Duran, A. Felder · Electronics Letters · 1994 · 30 citations

Engineering, Computer Engineering, Electrical Engineering +12

Low-frequency noise properties of selectively dry etched InP HEMT's

H.C. Duran, L. Ren, Mattias Beck et al. · IEEE Transactions on Electron Devices · 1998 · 22 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

CMOS membrane infrared sensors and improved TMAHW etchant

R. Lenggenhager, D. Jaeggi, P. Malcovati et al. · 2002 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

Atomic force microscopy investigations of dry etched gate recesses for InGaAs/InAlAs-based high-electron-mobility transistors using methane–hydrogen reactive ion etching

H.C. Duran, W. Patrick, Werner Bächtold · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 12 citations

Engineering, Electrical Engineering, Materials Science +17

Low-noise properties of dry gate recess etched InP HEMTs

H.C. Duran, Bernd-Ulrich Helmut Klepser, W. Bächtold · IEEE Electron Device Letters · 1996 · 12 citations

Engineering, Electrical Engineering, Materials Science +17