Adilson S. Cardoso - Concepedia

Author

Adilson S. Cardoso

Georgia Institute of Technology ORCID

Also Known As

Adilson Cardoso, Adilson S. Cardoso, Pauline Paki-Amouzou

Publications

425

Citations

H-Index

Concepts

All Affiliations

Georgia Institute of Technology Defense Threat Reduction Agency United States Naval Research Laboratory Sotera Defense Solutions (United States)Leibniz Institute for High Performance Microelectronics

About

Adilson S. Cardoso is an author at Georgia Institute of Technology specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	14	318
2	Electrical Engineering	11	12	290
3	Applied Physics	8	8	189
4	Computer Engineering	6	6	110
5	Natural Sciences	1	1	17

Adilson S. Cardoso

Publications

333

Citations

H-Index

Page 1

	Year	Citations
A 0.8 THz $f_{\rm MAX}$ SiGe HBT Operating at 4.3 K Partha Sarathi Chakraborty, Adilson S. Cardoso, Brian R. Wier, IEEE Electron Device Letters SemiconductorsThz PhotonicsElectrical EngineeringSemiconductor TechnologyRecord Ac Performance	2014	68
A New Wideband, Low Insertion Loss, High Linearity SiGe RF Switch Clifford D. Cheon, Moon-Kyu Cho, Sunil G. Rao, IEEE Microwave and Wireless Components Letters Electrical EngineeringSige HbtEngineeringRf SemiconductorHigh-frequency Device	2020	34
Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology Adilson S. Cardoso, Partha Sarathi Chakraborty, Nedeljko Karaulac, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringVlsi DesignCircuit-level Rhbd AlternativeRhbd Technique	2014	31
Low-loss, wideband SPDT switches and switched-line phase shifter in 180-nm RF CMOS on SOI technology Adilson S. Cardoso, Prabir Saha, Partha Sarathi Chakraborty, Low-power Electronics180-Nm Rf CmosElectrical EngineeringSoi TechnologyMatching Network	2014	26
An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS Nelson E. Lourenco, Stanley D. Phillips, Troy England, IEEE Transactions on Nuclear Science EngineeringVlsi DesignSingle-event EffectsIntegrated CircuitsNm Sige Bicmos	2013	24
Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth-Generation SiGe HBTs Zachary E. Fleetwood, Adilson S. Cardoso, Ickhyun Song, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringTechnology GenerationRf SemiconductorHigh-frequency Device	2014	22
An Investigation of Single Event Transient Response in 45-nm and 32-nm SOI RF-CMOS Devices and Circuits Troy England, Rajan Arora, Zachary E. Fleetwood, IEEE Transactions on Nuclear Science EngineeringSingle Event TransientElectromagnetic CompatibilitySemiconductor DeviceCharge Deposition	2013	19
On the Transient Response of a Complementary (npn <formula formulatype="inline"><tex Notation="TeX">$+$</tex></formula> pnp) SiGe HBT BiCMOS Technology Nelson E. Lourenco, Zachary E. Fleetwood, Seung-Woo Jung, IEEE Transactions on Nuclear Science EngineeringNuclear PhysicsIntegrated CircuitsHigh-power LasersSemiconductor Device	2014	17
Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology Saeed Zeinolabedinzadeh, Ickhyun Song, Uppili S. Raghunathan, IEEE Transactions on Nuclear Science Radar75-110 GhzSingle Event TransientsEngineeringRadio Frequency	2015	16
Design Methodology for a Wideband, Low Insertion Loss, Digital Step Attenuator in SiGe BiCMOS Technology Clifford D. Cheon, Sunil G. Rao, Wonsub Lim, IEEE Transactions on Circuits & Systems II Express Briefs	2021	15

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