Adilson S. Cardoso

A 0.8 THz $f_{\rm MAX}$ SiGe HBT Operating at 4.3 K

Partha Sarathi Chakraborty, Adilson S. Cardoso, Brian R. Wier et al. · IEEE Electron Device Letters · 2014 · 68 citations

Semiconductors, Thz Photonics, Electrical Engineering +14

A New Wideband, Low Insertion Loss, High Linearity SiGe RF Switch

Clifford D. Cheon, Moon-Kyu Cho, Sunil G. Rao et al. · IEEE Microwave and Wireless Components Letters · 2020 · 34 citations

Electrical Engineering, Sige Hbt, Engineering +12

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

Adilson S. Cardoso, Partha Sarathi Chakraborty, Nedeljko Karaulac et al. · IEEE Transactions on Nuclear Science · 2014 · 31 citations

Electrical Engineering, Engineering, Vlsi Design +11

Low-loss, wideband SPDT switches and switched-line phase shifter in 180-nm RF CMOS on SOI technology

Adilson S. Cardoso, Prabir Saha, Partha Sarathi Chakraborty et al. · 2014 · 26 citations

Low-power Electronics, 180-Nm Rf Cmos, Electrical Engineering +14

An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS

Nelson E. Lourenco, Stanley D. Phillips, Troy England et al. · IEEE Transactions on Nuclear Science · 2013 · 24 citations

Engineering, Vlsi Design, Single-event Effects +20