K. Pötschke

10 6 years extrapolated hole storage time in GaSb∕AlAs quantum dots

A. Marent, M. Geller, A. Schliwa et al. · Applied Physics Letters · 2007 · 117 citations

Categoryquantum Electronics, Non-volatile Memory, Engineering +19

Control of fine-structure splitting and excitonic binding energies in selected individual InAs∕GaAs quantum dots

R. Seguin, A. Schliwa, Tim David Germann et al. · Applied Physics Letters · 2006 · 64 citations · Full text

Ripening of self-organized InAs quantum dots

K. Pötschke, L. Müller‐Kirsch, R. Heitz et al. · Physica E Low-dimensional Systems and Nanostructures · 2004 · 63 citations

Engineering, Nanotechnology, Applied Physics +2

Structure and intermixing of GaSb∕GaAs quantum dots

Rainer Timm, H. Eisele, A. Lenz et al. · Applied Physics Letters · 2004 · 57 citations

Materials Science, Semiconductors, Engineering +14

Atomic structure and optical properties of InAs submonolayer depositions in GaAs

A. Lenz, H. Eisele, Jonas N. Becker et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011 · 45 citations

Optical Materials, Engineering, Optoelectronic Devices +19