A. Marent

10 6 years extrapolated hole storage time in GaSb∕AlAs quantum dots

A. Marent, M. Geller, A. Schliwa et al. · Applied Physics Letters · 2007 · 117 citations

Categoryquantum Electronics, Non-volatile Memory, Engineering +19

A write time of 6ns for quantum dot–based memory structures

M. Geller, A. Marent, Tobias Nowozin et al. · Applied Physics Letters · 2008 · 95 citations

Non-volatile Memory, Self-organized Quantum Dots, Engineering +17

The QD-Flash: a quantum dot-based memory device

A. Marent, Tobias Nowozin, M. Geller et al. · Semiconductor Science and Technology · 2010 · 83 citations

Non-volatile Memory, Engineering, Large Potential +17

A high‐performance, safer and semi‐automated approach for the δ ¹⁸ O analysis of diatom silica and new methods for removing exchangeable oxygen

Bernhard Chapligin, Hanno Meyer, H. Friedrichsen et al. · Rapid Communications in Mass Spectrometry · 2010 · 62 citations

The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory

M. Hayne, Robert J. Young, E. P. Smakman et al. · Journal of Physics D Applied Physics · 2013 · 51 citations