Tobias Nowozin

A write time of 6ns for quantum dot–based memory structures

M. Geller, A. Marent, Tobias Nowozin et al. · Applied Physics Letters · 2008 · 95 citations

Non-volatile Memory, Self-organized Quantum Dots, Engineering +17

The QD-Flash: a quantum dot-based memory device

A. Marent, Tobias Nowozin, M. Geller et al. · Semiconductor Science and Technology · 2010 · 83 citations

Non-volatile Memory, Engineering, Large Potential +17

The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory

M. Hayne, Robert J. Young, E. P. Smakman et al. · Journal of Physics D Applied Physics · 2013 · 51 citations

800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots

Tobias Nowozin, Leo Bonato, A. Högner et al. · Applied Physics Letters · 2013 · 43 citations

Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

Tobias Nowozin, A. Marent, Leo Bonato et al. · Physical Review B · 2012 · 42 citations · Full text

Materials Science, Ii-vi Semiconductor, Electrical Engineering +13