Leo Bonato

The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory

M. Hayne, Robert J. Young, E. P. Smakman et al. · Journal of Physics D Applied Physics · 2013 · 51 citations

800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots

Tobias Nowozin, Leo Bonato, A. Högner et al. · Applied Physics Letters · 2013 · 43 citations

Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

Tobias Nowozin, A. Marent, Leo Bonato et al. · Physical Review B · 2012 · 42 citations · Full text

Materials Science, Ii-vi Semiconductor, Electrical Engineering +13

MOVPE‐Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications

Elisa Maddalena Sala, Ismail Firat Arikan, Leo Bonato et al. · physica status solidi (b) · 2018 · 28 citations

Optical Materials, Engineering, Optoelectronic Devices +16

230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier

Leo Bonato, Elisa Maddalena Sala, Gernot Stracke et al. · Applied Physics Letters · 2015 · 25 citations

Wide-bandgap Semiconductor, In0.5ga0.5as Quantum Dots, Categoryquantum Electronics +19