Gernot Stracke

230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier

Leo Bonato, Elisa Maddalena Sala, Gernot Stracke et al. · Applied Physics Letters · 2015 · 25 citations

Wide-bandgap Semiconductor, In0.5ga0.5as Quantum Dots, Categoryquantum Electronics +19

15 Gb/s index-coupled distributed-feedback lasers based on 1.3 <i>μ</i>m InGaAs quantum dots

M. Stubenrauch, Gernot Stracke, D. Arsenijević et al. · Applied Physics Letters · 2014 · 19 citations

Quantum Photonics, Optical Materials, Engineering +18

Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer

Gernot Stracke, Alexander Glacki, Tobias Nowozin et al. · Applied Physics Letters · 2012 · 19 citations

Engineering, Optoelectronic Devices, Semiconductor Nanostructures +16

Indirect and direct optical transitions in In0.5Ga0.5As/GaP quantum dots

Gernot Stracke, Elisa Maddalena Sala, Sören Selve et al. · Applied Physics Letters · 2014 · 16 citations

Optical Materials, Engineering, Optoelectronic Devices +21

Spatial structure of In0.25Ga0.75As/GaAs/GaP quantum dots on the atomic scale

Christopher Prohl, A. Lenz, Dominik Roy et al. · Applied Physics Letters · 2013 · 14 citations

Materials Science, Ii-vi Semiconductor, Gap Matrix +12