Christopher Prohl

Evolution of the InAs wetting layer on GaAs(001)-c(4×4) on the atomic scale

Jan Grabowski, Christopher Prohl, Britta Höpfner et al. · Applied Physics Letters · 2009 · 22 citations

Semiconductors, Materials Science, Electrical Engineering +14

Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer

Gernot Stracke, Alexander Glacki, Tobias Nowozin et al. · Applied Physics Letters · 2012 · 19 citations

Engineering, Optoelectronic Devices, Semiconductor Nanostructures +16

Energy surfaces of rare-earth silicide films on Si(111)

Martina Wanke, M. Franz, M. Vetterlein et al. · Surface Science · 2009 · 18 citations

Engineering, Surface Science, Applied Physics +5

Atomic structure of the (4×3) reconstructed InGaAs monolayer on GaAs(001)

H. Eisele, Britta Höpfner, Christopher Prohl et al. · Surface Science · 2009 · 16 citations

Materials Science, Semiconductors, Engineering +9

Electronic properties of dysprosium silicide nanowires on Si(557)

Martina Wanke, M. Franz, M. Vetterlein et al. · Journal of Applied Physics · 2010 · 15 citations

Engineering, Physics, Nanomaterials +13