Bhanu B. Upadhyay

Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs

Yogendra Yadav, Bhanu B. Upadhyay, Mudassar Meer et al. · IEEE Electron Device Letters · 2018 · 53 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs

Yogendra Yadav, Bhanu B. Upadhyay, Jaya Jha et al. · IEEE Transactions on Electron Devices · 2020 · 35 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved <i>I</i> _ON/<i>I</i> _OFF Operating at 473 K

Ritam Sarkar, Bhanu B. Upadhyay, Swagata Bhunia et al. · IEEE Transactions on Electron Devices · 2021 · 25 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Reduced Contact Resistance and Improved Transistor Performance by Surface Plasma Treatment on Ohmic Regions in AlGaN/GaN HEMT Heterostructures

Yogendra Yadav, Bhanu B. Upadhyay, Mudassar Meer et al. · physica status solidi (a) · 2017 · 21 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +13

Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs

Bhanu B. Upadhyay, Kuldeep Takhar, Jaya Jha et al. · Solid-State Electronics · 2017 · 17 citations

Electrical Engineering, Engineering, Rf Semiconductor +7