Swagata Bhunia

Microwave synthesis, single crystal growth and characterization of ZnTe

Swagata Bhunia, D. N. Bose · Journal of Crystal Growth · 1998 · 48 citations

Materials Science, Engineering, Crystal Growth Technology +3

Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved <i>I</i> _ON/<i>I</i> _OFF Operating at 473 K

Ritam Sarkar, Bhanu B. Upadhyay, Swagata Bhunia et al. · IEEE Transactions on Electron Devices · 2021 · 25 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application

Ritam Sarkar, Swagata Bhunia, Dhiman Nag et al. · Applied Physics Letters · 2019 · 22 citations · Full text

Wide-bandgap Semiconductor, Engineering, Mm Si Wafer +18

Schottky barrier studies on single crystal ZnTe and determination of interface index

Swagata Bhunia, D. N. Bose · Journal of Applied Physics · 2000 · 19 citations

Wide-bandgap Semiconductor, Engineering, Effective Richardson +16

Dislocation density and strain-relaxation in Ge 1−x Sn x layers grown on Ge/Si (0 0 1) by low-temperature molecular beam epitaxy

Krista R. Khiangte, J.S. Rathore, Vaibhav Sharma et al. · Journal of Crystal Growth · 2017 · 17 citations

Materials Science, Epitaxial Growth, Engineering +6